1.3-μm-Wavelength AlGaInAs Multiple-Quantum-Well Semi-Insulating Buried-Heterostructure Distributed-Reflector Laser Arrays on Semi-Insulating InP Substrate

1.3-mu m-wavelength AlGaInAs distributed-reflector laser arrays on semi-insulating InP substrate for high-speed direct modulation are investigated to realize compact and low-power-consumptive optical modules. Combination of AlGaInAs quantum wells with large differential gain and semi-insulating buried-heterostructure for reduction of the volume in active region achieved high-speed direct modulation. The fabricated lasers in the array lase with different wavelengths with stable single-longitudinal-mode. Clear eye-opening and large mask margin were obtained in push-pull driving at 25.8 Gb/s direct modulation with coplanar electrode and semi-insulating InP substrate. Comparison of modulation waveform under simultaneous operation of neighbor lasers shows that crosstalk between lasers in the array is small. Clear eye-openings, large mask margins, and 10-km fiber transmission of four different wavelength lasers on LAN-WDM grid are demonstrated under 28-Gb/s operation at 50 degrees C. For further high-speed operation, 43-Gb/s direct modulation were performed. These results indicate that the 1.3-mu m AlGaInAs DR laser arrays are promising as light sources for 100-Gb/s Ethernet and higher speed transmission.