Silicon-germanium: Carbon HBTs are ready for mainstream RF BiCMOS processes

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Bindra, A
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ELECTRONIC DESIGN | 2000年 / 48卷 / 11期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：32 / 32
页数：1
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