Spatially resolved cathodoluminescence spectra of InGaN quantum wells

被引：379
|
作者：
Chichibu, S
Wada, K
Nakamura, S
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP, SYST ELECT LABS, CPD SEMICOND MAT RES, ATSUGI, KANAGAWA 24301, JAPAN
[2] NICHIA CHEM IND LTD, DEPT RES & DEV, ANAN, TOKUSHIMA 774, JAPAN
来源：
APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 16期
关键词：
D O I：
10.1063/1.120025
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Spatially resolved cathodoluminescence (CL) spectrum mapping revealed a strong exciton localization in InGaN single-quantum-wells (SQWs). Transmission electron micrographs exhibited a well-organized SQW structure having abrupt InGaN/GaN heterointerfaces. However, comparison between atomic force microscopy images for GaN-capped and uncapped SQWs indicated areas of InN-rich material, which are about 20 nm in lateral size. The CL images taken at the higher and lower energy side of the spatially integrated CL peak consisted of emissions from complementary real spaces, and the area was smaller than 60 nm in lateral size. (C) 1997 American institute of Physics.
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收藏
页码：2346 / 2348
页数：3
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