Compositional inhomogeneities in InGaN studied by transmission electron microscopy and spatially resolved cathodoluminescence

被引：17
|
作者：
Selke, H
Amirsawadkouhi, M
Ryder, PL
Böttcher, T
Einfeldt, S
Hommel, D
Bertram, F
Christen, J
机构：
[1] Univ Bremen, Inst Werkstoffphys & Strukturforsch, D-28334 Bremen, Germany
[2] Univ Bremen, Inst Festkorperphys, D-28334 Bremen, Germany
[3] Univ Magdeburg, Inst Expt Phys, D-39016 Magdeburg, Germany
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 59卷 / 1-3期
关键词：
transmission electron microscopy; cathodoluminescence spectroscopy; molecular beam epitaxy; InGaN; composition fluctuations;
D O I：
10.1016/S0921-5107(98)00341-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structural and optical properties of InGaN epilayers grown by different molecular beam epitaxy (MBE) techniques were studied with high spatial resolution. Mappings of the local emission wavelength obtained by cathodoluminescence (CL) spectroscopy indicate lateral and spectral inhomogeneities in the luminescence of InGaN epilayers grown with continuous In and Ga fluxes. These results agree well with variations in the chemical composition in the lateral and in the growth direction seen in mappings of the local composition which were obtained by energy-dispersive X-ray (EDX) microanalysis in cross-sectional transmission electron microscopy (TEM). Possible origins of these variations are discussed. In comparison, epilayers grown with alternating deposition of (In, Ga)N and (Ga)N are more homogeneous. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：279 / 282
页数：4
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