Carrier diffusion lengths of (In,Ga)As, GaAs and (In,Ga)(As,N) quantum wells studied by spatially resolved cathodoluminescence

被引：0
|
作者：
Jahn, U. [1 ]
Flissikowski, T. [1 ]
Grahn, H. T. [1 ]
Hey, R. [1 ]
Wiebicke, E. [1 ]
Bluhm, A. K. [1 ]
Miguel-Sanchez, J. [1 ]
Guzman, A. [1 ]
机构：
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
Microscopy of Semiconducting Materials | 2005年 / 107卷
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The diffusion length of excess carriers (L-d) of an (In,Ga)As and GaAs single quantum well (QW) determined by cathodoluminescence exhibits a thermally activated increase up to 100 K and is independent of the detection energy (E). L-d of an (In,Ga)(As,N) QW, however, decreases both with increasing temperature (T) and at low T with increasing E. The qualitative difference of L-d(T,E) between the quaternary and binary QW is explained in terms of different transport mechanisms (hopping versus tunnelling) in connection with the presence of localized states.
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页码：467 / 470
页数：4
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