Localization versus carrier-screening effects in InGaN quantum wells - A time-resolved cathodoluminescence study

被引：0
|
作者：
Bell, A [1 ]
Christen, J [1 ]
Bertram, F [1 ]
Stevens, M [1 ]
Ponce, FA [1 ]
Marui, H [1 ]
Tanaka, S [1 ]
机构：
[1] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
来源：
Physics of Semiconductors, Pts A and B | 2005年 / 772卷
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Time-resolved cathodoluminescence (CL) has been used to separate the effects of internal fields and localization at indium fluctuations in InGaN quantum wells. Spatially-time-resolved CL measurements were recorded at regions of high and low indium content. Faster decay is observed in the local transients recorded at indium rich regions.
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页码：301 / 302
页数：2
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