InGaAsP/InP laser diodes/superluminescent diodes with nonidentical quantum wells

被引：1
|
作者：
Lin, CF [1 ]
Wu, BR [1 ]
Laih, LW [1 ]
Shih, TT [1 ]
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Grad Inst Electroopt Engn, Taipei 106, Taiwan
来源：
COMMAD 2000 PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/COMMAD.2000.1022957
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Novel behavior of laser diodes (LDs) and superluminescent diodes (SLDs) fabricated on substrates with nonidentical quantum wells has been discovered. Mirror-imaged nonidentical quantum well (QW) lasers/superluminescent diodes have been designed, fabricated, and measured. Nonuniform carrier distribution inside multiple quantum wells is further verified experimentally. Measured characteristics also show that electrons, instead of holes, are the dominant carrier affecting carrier distribution. The sequence of the nonidentical QW is also shown to have significant influence on device characteristics, showing very different carrier distribution in each sequence.
引用
收藏
页码：336 / 339
页数：4
相关论文
共 50 条
  • [41] Quantum dot superluminescent diodes at 1300 nm
    Vélez, C
    Occhi, L
    INTEGRATED OPTICAL DEVICES, NANOSTRUCTURES, AND DISPLAYS, 2004, 5618 : 67 - 74
  • [42] Improved temperature characteristics of laser diodes with nonidentical multiple quantum wells due to temperature-induced carrier redistribution
    Lin, CF
    Su, YS
    Yu, DK
    Wu, CH
    Wu, BR
    APPLIED PHYSICS LETTERS, 2003, 82 (20) : 3403 - 3405
  • [43] AlGaInAs/InP Based Five & Three Quantum Wells Mode Locked Laser Diodes: A Comparative Study
    Akbar, Jehan
    Hanif, Muhammad
    Naeem, Muhammad Azhar
    Abid, Kamran
    ELEKTRONIKA IR ELEKTROTECHNIKA, 2020, 26 (05) : 22 - 27
  • [44] The fabrication of 1.55μm InGaAsP/InP tapered-stripe superluminescent diodes with window facets and laterally tilted structures
    Kim, JH
    An, SK
    Hong, TH
    Lee, SJ
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 46 (02) : 517 - 520
  • [45] BARITT diodes with quantum wells
    Aroutiounian, VM
    Buniatyan, VV
    Petrosyan, SG
    TERAHERTZ AND GIGAHERTZ PHOTONICS, 1999, 3795 : 551 - 560
  • [46] High Power Blue-Violet Superluminescent Light Emitting Diodes with InGaN Quantum Wells
    Rossetti, Marco
    Dorsaz, Julien
    Rezzonico, Raffaele
    Duelk, Marcus
    Velez, Christian
    Feltin, Eric
    Castiglia, Antonino
    Cosendey, Gatien
    Carlin, Jean-Francois
    Grandjean, Nicolas
    APPLIED PHYSICS EXPRESS, 2010, 3 (06)
  • [47] MODEL FOR PEAK-GAIN COEFFICIENT IN InGaAsP/InP SEMICONDUCTOR LASER DIODES.
    Ghafoori-Shiraz, H.
    Optical and Quantum Electronics, 1988, 20 (02) : 156 - 163
  • [48] V-GROOVED-SUBSTRATE BURIED HETEROSTRUCTURE InGaAsP/InP LASER DIODES.
    Imai, Hajime
    Ishikawa, Hiroshi
    Hori, Ken-ichi
    Fujitsu Scientific and Technical Journal, 1982, 18 (04): : 541 - 561
  • [49] Carrier Distribution in InP/AlGaInP Quantum Dot Laser Diodes
    Al-Ghamdi, M. S.
    Smowton, P. M.
    Blood, P.
    Krysa, A. B.
    2011 IEEE PHOTONICS CONFERENCE (PHO), 2011, : 169 - +
  • [50] InP Quantum Dot 7xxnm Laser Diodes
    Smowton, Peter M.
    Al-Ghamdi, Mohammed
    Edwards, Gareth
    Shutts, Samuel
    Krysa, Andrey B.
    2009 9TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2009, : 508 - +
12345