InGaAsP/InP laser diodes/superluminescent diodes with nonidentical quantum wells

被引：1
|
作者：
Lin, CF [1 ]
Wu, BR [1 ]
Laih, LW [1 ]
Shih, TT [1 ]
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Grad Inst Electroopt Engn, Taipei 106, Taiwan
来源：
COMMAD 2000 PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/COMMAD.2000.1022957
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Novel behavior of laser diodes (LDs) and superluminescent diodes (SLDs) fabricated on substrates with nonidentical quantum wells has been discovered. Mirror-imaged nonidentical quantum well (QW) lasers/superluminescent diodes have been designed, fabricated, and measured. Nonuniform carrier distribution inside multiple quantum wells is further verified experimentally. Measured characteristics also show that electrons, instead of holes, are the dominant carrier affecting carrier distribution. The sequence of the nonidentical QW is also shown to have significant influence on device characteristics, showing very different carrier distribution in each sequence.
引用
收藏
页码：336 / 339
页数：4
相关论文
共 50 条
  • [31] Broad-band superluminescent diodes fabricated on a substrate with asymmetric dual quantum wells
    Lin, CF
    Lee, BL
    Lin, PC
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (11) : 1456 - 1458
  • [32] High power polarization-insensitive 1.3 μm InGaAsP-InP quantum-well superluminescent emission diodes grown by MOVPE
    Ma, H
    Chen, SH
    Yi, XJ
    Zhu, GX
    Jin, JY
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (07) : 823 - 827
  • [33] Blueshifting of InGaAsP/InP laser diodes by low-energy ion implantation
    Paquette, M
    Beauvais, J
    Beerens, J
    Poole, PJ
    Charbonneau, S
    Miner, CJ
    Blaauw, C
    APPLIED PHYSICS LETTERS, 1997, 71 (26) : 3749 - 3751
  • [34] Quantum dot superluminescent diodes at 1300 nm
    Vélez, C
    Occhi, L
    Coherence Domain Optical Methods and Optical Coherence Tomography in Biomedicine IX, 2005, 5690 : 214 - 221
  • [35] Study of chirped quantum dot superluminescent diodes
    Han, IK
    Bae, HC
    Cho, WJ
    Lee, JI
    Park, HL
    Kim, TG
    Lee, JI
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (7B): : 5692 - 5695
  • [36] Characteristics of chirped quantum dot superluminescent diodes
    Bae, H. C.
    Park, H. L.
    You, Y. C.
    Han, I. K.
    Kim, J. S.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 4, 2009, 6 (04): : 932 - +
  • [37] Superluminescent diodes using quantum dots superlattice
    Dimas, CE
    Djie, HS
    Ooi, BS
    JOURNAL OF CRYSTAL GROWTH, 2006, 288 (01) : 153 - 156
  • [38] BROADER SPECTRAL WIDTH INGAASP STACKED ACTIVE LAYER SUPERLUMINESCENT DIODES
    MIKAMI, O
    YASAKA, H
    NOGUCHI, Y
    APPLIED PHYSICS LETTERS, 1990, 56 (11) : 987 - 989
  • [39] Influences of quantum noises on direct-modulated properties of 1.3-μm InGaAsP/InP laser diodes
    Wang Jun
    Ma Xiao-Yu
    Bai Yi-Ming
    Cao Li
    Wu Da-Jin
    CHINESE PHYSICS, 2006, 15 (09): : 2125 - 2129
  • [40] Influences of quantum noises on direct-modulated properties of 1.3-μm InGaAsP/InP laser diodes
    National Engineering Research Center for Opto-electronic Device, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
    不详
    不详
    Chin. Phys., 2006, 9 (2125-2129):
12345