InGaAsP/InP laser diodes/superluminescent diodes with nonidentical quantum wells

被引：1
|
作者：
Lin, CF [1 ]
Wu, BR [1 ]
Laih, LW [1 ]
Shih, TT [1 ]
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Grad Inst Electroopt Engn, Taipei 106, Taiwan
来源：
COMMAD 2000 PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/COMMAD.2000.1022957
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Novel behavior of laser diodes (LDs) and superluminescent diodes (SLDs) fabricated on substrates with nonidentical quantum wells has been discovered. Mirror-imaged nonidentical quantum well (QW) lasers/superluminescent diodes have been designed, fabricated, and measured. Nonuniform carrier distribution inside multiple quantum wells is further verified experimentally. Measured characteristics also show that electrons, instead of holes, are the dominant carrier affecting carrier distribution. The sequence of the nonidentical QW is also shown to have significant influence on device characteristics, showing very different carrier distribution in each sequence.
引用
收藏
页码：336 / 339
页数：4
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