High read stability and low leakage SRAM cell based on data/bitline decoupling

被引：0
|
作者：
Liu, Zhiyu [1 ]
Kursun, Volkan [1 ]
机构：
[1] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA
来源：
IEEE INTERNATIONAL SOC CONFERENCE, PROCEEDINGS | 2006年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
引用
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页码：115 / +
页数：2
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