Low On-state Losses Trench IGBT With High-k Dielectric Layer

被引：0

作者：

Wu, Wei ^{[1
]}

Xiang, Yong ^{[1
]}

Ji, Hong ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Microelect & Solid State Elect, Chengdu 610054, Peoples R China

来源：

2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel trench IGBT with a high-k (HK) buried layer below the trench gate is proposed and investigated by simulation. The HK dielectric causes a self-adapted assistant depletion of the n enhancement layer. This not only increases the n enhancement layer doping concentration and thus lowers the on-state losses without compromising the switching performance or the breakdown rating. The forward voltage drop of the proposed device reduces by 40% compared with that of a conventional FS IGBT.

引用

页码：401 / 403

页数：3

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