Low On-state Losses Trench IGBT With High-k Dielectric Layer

被引：0
|
作者：
Wu, Wei [1 ]
Xiang, Yong [1 ]
Ji, Hong [1 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Microelect & Solid State Elect, Chengdu 610054, Peoples R China
来源：
2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel trench IGBT with a high-k (HK) buried layer below the trench gate is proposed and investigated by simulation. The HK dielectric causes a self-adapted assistant depletion of the n enhancement layer. This not only increases the n enhancement layer doping concentration and thus lowers the on-state losses without compromising the switching performance or the breakdown rating. The forward voltage drop of the proposed device reduces by 40% compared with that of a conventional FS IGBT.
引用
收藏
页码：401 / 403
页数：3
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