600V trench-gate NPT-IGBT with excellent low on-state voltage

被引：3
|
作者：
Tanaka, M [1 ]
Teramae, S [1 ]
Takahashi, Y [1 ]
Takeda, T [1 ]
Yamaguchi, M [1 ]
机构：
[1] Toshiba Corp, Semicond Co, Saiwai Ku, Kawasaki, Kanagawa 2128583, Japan
来源：
12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/ISPSD.2000.856825
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The 600V Non-Punch Through (NPT) IGBT which has low on-state voltage (V-CE(sat)) has been developed. This device has a fine pitch trench-gate structure at the emitter side and the collector layer with low injection efficiency at collector side. A novel profile has been installed to realize low injection efficiency and low V-CE(sat). By numerical simulation, it has been confirmed that the trade-off relation between V-CE(sat) and turn-off loss of the trench-gate NPT-IGBT is as good as that of the trench-gate punch through (PT-)IGBT. Adopting the novel profile for the collector structure, the low V-CE(sat) of 1.6V at 180A/cm(2) has been realized at the 600V trench-gate NPT-IGBT.
引用
收藏
页码：279 / 282
页数：4
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