Evaluation of 600V/100A NPT-IGBT with a non-self-align shallow p-well formation techniques

被引：0

作者：

Otsuki, M ^{[1
]}

Momota, S ^{[1
]}

Kirisawa, M ^{[1
]}

Wakimoto, H ^{[1
]}

Seki, Y ^{[1
]}

机构：

[1] Fuji Elect Co LTd, Matsumoto Factory, Semicond Device R&D Ctr, Matsumoto, Nagano 3900821, Japan

来源：

12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ISPSD.2000.856812

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental results of planer gate IGBTs fabricated with newly developed a non-self-align shallow p-well formation technique are presented The 600V/100A NPT-IGBT shows the on-state voltage drop of about 1.7V, which is more than 0.4V reduction compared to the conventional devices. The average short circuit withstand capability of about 30 mu sec was obtained without external current limiting functions.

引用

页码：225 / 228

页数：4

共 3 条

[1] A new 600V PT-IGBT for the improved avalanche energy by employing the floating p-well
Kim, SS
Yun, CM
Choi, YI
Han, MK
[J]. ISPSD'03: 2003 IEEE 15TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS PROCEEDINGS, 2003, : 71 - 74
[2] A 600V FS-IGBT using locally isolated P-well structures for improved short circuit ruggedness
Kim, Jisun
Kim, Sooseong
Oh, Kwang-Hoon
Yun, Chongman
[J]. 2015 9TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND ECCE ASIA (ICPE-ECCE ASIA), 2015, : 823 - 828
[3] A new fault protection circuit of 600V PT-IGBT for the improved avalanche energy employing the floating p-well
Ji, IH
Jeon, BC
Choi, YH
Kim, SS
Choi, YI
Han, MK
[J]. PROCEEDINGS OF THE 17TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2005, : 87 - 90

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