Small facet high power 670nm AlGaInP/GaInP lasers

被引：0

作者：

Fu, L ^{[1
]}

Wu, L ^{[1
]}

Gao, F ^{[1
]}

Gfrörer, O ^{[1
]}

Hangleiter, A ^{[1
]}

Scholz, F ^{[1
]}

Schweizer, H ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Phys, D-70550 Stuttgart, Germany

来源：

COMPOUND SEMICONDUCTORS 1999 | 2000年 / 166期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this paper, small facet AlGaInP/GaInP lasers with an high output power of 65mW for 2mum and 110mW for 4mum lasers under CW operation are demonstrated. The obtained high output power is due to the enhancement of COD power level as a result of passivation effect caused by ECR-PECVD grown SiNx dielectric films. From the cathodeluminescence (CL) and current-voltage (I-V) measurement results, we propose that both the stress induced by film deposition and passivation effect to be responsible for the improved laser output characteristics.

引用

页码：375 / 378

页数：4

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