EFFECT OF ATOMIC-HYDROGEN ON 670NM ALGAINP VISIBLE LASER

An origin of improvements in the characteristic of 670nm strained multi-quantum well AlGaInP visible lasers during accelerated aging test is investigated. During the test, the overall laser characteristics are improved considerably after a short-term continuous operation of 3mW at 50 degrees C. From SIMS measurement, we find out that the atomic hydrogen in Zn doped AlGaInP cladding layer are dissociated from zinc-hydrogen complex and drifted into active region mle to bias voltage and aging temperature. Because the dissociation of the atomic hydrogen results in the decrease of series resistance and the atomic hydrogen drifted into the active region passivating defects at AlGaInP/GaInP interfaces, it is believed that the atomic hydrogen plays a great role in the reliability of MOCVD-grown AlGaInP lasers.