FACET HEATING IN ALGAINP 670NM DOUBLE-HETEROJUNCTION LASERS

被引：2
|
作者：
TANG, WC
ROSEN, HJ
PAYNE, RN
机构：
[1] IBM Almaden Research Center, San Jose, CA 95120
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 12期
关键词：
LASERS; SEMICONDUCTOR LASERS;
D O I：
10.1049/el:19920712
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Raman microprobe studies of AlGaInP 670 nm lasers show a higher facet temperature rise per unit output power than that observed in AlGaAs lasers. This heating appears to be localised in the lasing region of the laser facet. These results are supported by probe beam facet heating experiments which show substantial differences between the AlGaInP and AlGaAs lasers.
引用
收藏
页码：1129 / 1131
页数：3
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