The impact of LOC structures on 670-nm (A1)GaInP high-power lasers

被引：11
|
作者：
Lichtenstein, N [1 ]
Winterhoff, R
Scholz, F
Schweizer, H
Weiss, S
Hutter, M
Reichl, H
机构：
[1] JDS Uniphase, CH-8045 Zurich, Switzerland
[2] Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany
[3] Fraunhofer Inst Reliabil & Microintegrat, D-13355 Berlin, Germany
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2000年 / 6卷 / 04期
关键词：
AlGaInP; high-power and high-brightness lasers; LOC lasers;
D O I：
10.1109/2944.883369
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate the potential of large optical cavity (LOC)-laser structures for AlGaInP high-power lasers, For that we study large series of broad area lasers with varying waveguide widths to obtain statistically relevant data. We study in detail I-th, alpha (i), eta (i), and P-max, and analyze above-threshold behavior including temperature stability and leakage current. We got as expected for LOC structures minimal alpha (i) less than or equal to 1 cm(-1) resulting in eta (d) = 1.1 W/A for 64 X 2000 mum(2) uncoated devices. We obtain total output powers greater than or equal to3.2 W (qCW) and greater than or equal to1.5 W (CW) at 20 degreesC.
引用
收藏
页码：564 / 570
页数：7
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