High-frequency analog modulation of oxide confined 670-nm vertical-cavity surface-emitting lasers

被引：1
|
作者：
Carlsson, C
Modh, P
Halonen, J
Schatz, R
Larsson, A [1 ]
机构：
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Photon Lab, SE-41296 Gothenburg, Sweden
[2] Royal Inst Technol, Dept Microelect & Informat Technol, Lab Opt Photon & Quantum Elect, KTH Electrum 229, SE-16440 Kista, Sweden
来源：
OPTICAL ENGINEERING | 2004年 / 43卷 / 12期
关键词：
semiconductor laser; vertical-cavity surface-emitting laser; distortion; modulation; thermal effects;
D O I：
10.1117/1.1814361
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We investigate the bandwidth limitations and the analog modulation characteristics at microwave frequencies (0.1 to 10 GHz)of a low-capacitance oxide-confined 670-nm InGaAIP vertical-cavity surface-emitting laser (VCSEL). A maximum modulation bandwidth of 6.3 GHz, limited by thermal effects, is achieved. From measurements of distortion and noise, a spurious free dynamic range (SFDR) of 100 dB Hz(2/3) is obtained at frequencies up to 2 GHz, rendering such VCSELs useful for transmission of analog signals. At higher frequencies, the SFDR drops due to the thermally limited resonance frequency. (C) 2004 Society of Photo-Optical Instrumentation Engineers.
引用
收藏
页码：3138 / 3141
页数：4
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