Ferroelectric Characteristics of Ultra-thin Hf1-xZrxO2 Gate Stack and 1T Memory Operation Applications

被引：0

作者：

Lee, M. H. ^{[1
]}

Kuo, C-Y ^{[1
]}

Tang, C-H ^{[1
]}

Chen, H-H ^{[1
]}

Liao, C-Y ^{[1
]}

Hong, R-C ^{[1
]}

Gu, S-S ^{[1
]}

Chou, Y-C ^{[1
]}

Wang, Z-Y ^{[1
]}

Chen, S-Y ^{[1
]}

Chen, P-G ^{[1
,2
]}

Liao, M-H ^{[2
]}

Li, K-S ^{[3
]}

机构：

[1] Natl Taiwan Normal Univ, Inst Electroopt Sci & Technol, Taipei, Taiwan

[2] Natl Taiwan Univ, Dept Mech Engn, Taipei, Taiwan

[3] Natl Nano Device Labs, Hsinchu, Taiwan

来源：

2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018) | 2018年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The typical characteristics of ultra-thin Zr doped in HfO2 as gate stack is demonstrated. The IT memory window of P/E retention is 0.67V for 5nm and 1.52V for 7nm after extrapolated 10 years with V-P/E=+/- 4.8V, and >10(9) cycles of read endurance. It is promising to use ultra-thin FE-HZO as the guidelines for IT memory applications.

引用

页码：271 / 273

页数：3

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