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Thickness scaling of pyroelectric response in thin ferroelectric Hf1-xZrxO2 films
被引:16
|作者:
Smith, Sean W.
[1
]
Henry, M. David
[1
]
Brumbach, Michael T.
[1
]
Rodriguez, Mark A.
[1
]
Ihlefeld, Jon F.
[1
,2
,3
]
机构:
[1] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA
[2] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA
[3] Univ Virginia, Charles L Brown Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
关键词:
TEMPERATURE;
OXIDES;
D O I:
10.1063/1.5045635
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The scaling of polarization and pyroelectric response across a thickness series (5-20 nm) of Hf0.58Zr0.42O2 films with TaN electrodes was characterized. Reduction in thickness from 20 nm to 5 nm resulted in a decreased remanent polarization from 17 to 2.8 mu C cm(-2). Accompanying the decreased remanent polarization was an increased absolute pyroelectric coefficient, from 30 to 58 mu C m(-2) K-1. The pyroelectric response of the 5 nm film was unstable and decreased logarithmically with time, while that of 10 nm and thicker films was stable over a time scale of >300 h at room temperature. The sign of the pyroelectric response was irreversible with differing polarity of poling bias for the 5 nm thick film, indicating that the enhanced pyroelectric response was of electret origins, whereas the pyroelectric response in thicker films was consistent with a crystallographic origin. Published by AIP Publishing.
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