Pyroelectric response in crystalline hafnium zirconium oxide (Hf1-xZrxO2) thin films

被引：84
|
作者：
Smith, S. W. [1 ]
Kitahara, A. R. [1 ,2 ]
Rodriguez, M. A. [1 ]
Henry, M. D. [1 ]
Brumbach, M. T. [1 ]
Ihlefeld, J. F. [1 ]
机构：
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
[2] Carnegie Mellon Univ, Pittsburgh, PA 15213 USA
来源：
APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 07期
关键词：
HFO2; FERROELECTRICITY;
D O I：
10.1063/1.4976519
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Pyroelectric coefficients were measured for 20 nm thick crystalline hafnium zirconium oxide (Hf1-xZrxO2) thin films across a composition range of 0 <= x <= 1. Pyroelectric currents were collected near room temperature under zero applied bias and a sinusoidal oscillating temperature profile to separate the influence of non-pyroelectric currents. The pyroelectric coefficient was observed to correlate with zirconium content, increased orthorhombic/tetragonal phase content, and maximum polarization response. The largest measured absolute value was 48 mu Cm-2 K-1 for a composition with x = 0.64, while no pyroelectric response was measured for compositions which displayed no remanent polarization (x = 0, 0.91, and 1). Published by AIP Publishing.
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页数：5
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