Impacts of surface nitridation on crystalline ferroelectric phase of Hf1-xZrxO2 and ferroelectric FET performance

被引：14
|
作者：
Lin, Yi-Jan [1 ]
Teng, Chih-Yu [1 ]
Hu, Chenming [2 ,3 ]
Su, Chun-Jung [4 ]
Tseng, Yuan-Chieh [1 ]
机构：
[1] Natl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Ta Hsueh Rd, Hsinchu 30010, Taiwan
[2] Natl Yang Ming Chiao Tung Univ, Intelligent Semicond Nanosyst Technol Res Ctr, 1001 Ta Hsueh Rd, Hsinchu 30010, Taiwan
[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[4] Taiwan Semicond Res Inst, 26 Prosperity Rd 1, Hsinchu 30010, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2021年 / 119卷 / 19期
关键词：
FIELD-EFFECT TRANSISTORS; WAKE-UP; OXYGEN VACANCIES; POLARIZATION; MEMORY; FILM;
D O I：
10.1063/5.0062475
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper presents an approach to enhance Hf0.5Zr0.5O2 (HZO) ferroelectric orthorhombic phase (O-phase) formation via in situ NH3 plasma treatment. High-resolution non-disruptive hard x-ray photoelectron spectroscopy confirmed that O-phase formation can be enhanced by suppressed interfacial diffusion between HZO and the top TiN electrode. Additional N-bonding facilitated by NH3 treatment was shown to suppress the interaction between TiN and HZO, thereby reducing the formation of oxygen vacancies within HZO. It was shown to improve the reliability and ferroelectric performance (examined by the leakage current and positive-up-negative-down measurements) of HZO devices. After cyclic operations, NH3-treated ferroelectric FETs (FeFETs) exhibited stable transfer characteristics and memory windows, whereas untreated devices presented unstable behaviors. Our results demonstrate the efficacy of the proposed in situ NH3-treatment scheme in enhancing the stability of HZO-based FeFETs.
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页数：5
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