Dynamic On-state Resistance Evaluation of GaN Devices under Hard and Soft Switching Conditions

被引：0

作者：

Li, Rui ^{[1
]}

Wu, Xinke ^{[1
]}

Xie, Gang ^{[1
]}

Sheng, Kuang ^{[1
]}

机构：

[1] Zhejiang Univ, Coll Elect Engn, Hangzhou, Zhejiang, Peoples R China

来源：

THIRTY-THIRD ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2018) | 2018年

关键词：

GaN power device; Dynamic on-state resistance; Current collapse; Hard switching; Soft switching; IMPACT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dynamic on-state resistance (R-DSON) of two commercial 600V/650V GaN power devices under hard and soft switching conditions are extracted and compared. In addition to standard double-pulse tester (DPT), a triangular current mode (TCM) soft switching circuit is built to simulate the actual applications including double-pulse and multi-pulse operating modes. The comparison between hard and soft switching conditions reveals that the devices with different internal structures exhibit significantly different dependence on the off-state voltage and frequency under hard and soft switching conditions, which should be taken fully into account for converter design and loss estimation. To avoid misestimation, a multi-pulse measurement need to be taken into considerations when evaluating R-DSON of GaN devices.

引用

页码：898 / 903

页数：6

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