Reducing Threshold Voltage of Organic Field-Effect Transistor by using ZrO2/PMMA as Gate Dielectric

被引：0

作者：

Shang, Liwei ^{[1
]}

Liu, Ming ^{[1
]}

Tu, Deyu ^{[1
]}

Zhen, Lijuan ^{[1
]}

Liu, Xinghua ^{[1
]}

Liu, Ge ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

来源：

2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年

关键词：

Thin film; OFET; ZrO2; PMMA;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By depositing a PMMA (poly(methyl methacrylate)) layer on top of an evaporated layer of ZrO2, the leakage has 4 orders of magnitude reducing compared with bare ZrO2 layer. Low roughness of PMMA/ZrO2 surface produces a high quality interface between the organic semiconductor and the combined insulator, thus the device has a significant improvement in performance. The typical field effect mobility, on/off current ratio, and sub-threshold slope of OFETs with bilayer dielectric are 5.6 x 10(-2) cm(2)/Vs, 1.2x10(3), and 0.3 V/decade respectively. It is noticeable that the threshold voltage is only 0.1V.

引用

页码：1033 / 1036

页数：4

共 50 条

[1] Low-Voltage Organic Field-Effect Transistor With PMMA/ZrO2 Bilayer Dielectric
Shang, Liwei
Liu, Ming
Tu, Deyu
Liu, Ge
Liu, Xinohua
Ji, Zhuoyu
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (03) : 370 - 376
[2] ZRO2 GATE PH-SENSITIVE FIELD-EFFECT TRANSISTOR
SOBCZYNSKA, D
TORBICZ, W
[J]. SENSORS AND ACTUATORS, 1984, 6 (02): : 93 - 105
[3] Fabrication of an organic field-effect transistor on a mica gate dielectric
Matsumoto, Akira
Onoki, Ryo
Ueno, Keiji
Ikeda, Susumu
Saiki, Koichiro
[J]. CHEMISTRY LETTERS, 2006, 35 (04) : 354 - 355
[4] Reduction of Hysteresis in Organic Field-Effect Transistor by Ferroelectric Gate Dielectric
Chen, Xiangyu
Ou-Yang, Wei
Weis, Martin
Taguchi, Dai
Manaka, Takaaki
Iwamotoy, Mitsumasa
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (02)
[5] Tuning of Threshold Voltage in Organic Field-Effect Transistor by Dipole Monolayer
Wei Ou-Yang
Chen, Xiangyu
Weis, Martin
Manaka, Takaaki
Iwamoto, Mitsumasa
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
[6] Modeling the effect of top gate voltage on the threshold of a double gate organic field effect transistor
Karimi-Alavijeh, Hamidreza
Katebi-Jahromi, Alireza
Gharavi, Alireza
[J]. JOURNAL OF APPLIED PHYSICS, 2012, 112 (07)
[7] Double-gate tunnel field-effect transistor: Gate threshold voltage modeling and extraction
Li Yu-chen
Zhang He-ming
Hu Hui-yong
Zhang Yu-ming
Wang Bin
Zhou Chun-yu
[J]. JOURNAL OF CENTRAL SOUTH UNIVERSITY, 2014, 21 (02) : 587 - 592
[8] Double-gate tunnel field-effect transistor:Gate threshold voltage modeling and extraction
李妤晨
张鹤鸣
胡辉勇
张玉明
王斌
周春宇
[J]. Journal of Central South University, 2014, 21 (02) : 587 - 592
[9] Double-gate tunnel field-effect transistor: Gate threshold voltage modeling and extraction
Yu-chen Li
He-ming Zhang
Hui-yong Hu
Yu-ming Zhang
Bin Wang
Chun-yu Zhou
[J]. Journal of Central South University, 2014, 21 : 587 - 592
[10] Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation
Naramura, Takuro
Inaba, Masafumi
Mizuno, Sho
Igarashi, Keisuke
Kida, Eriko
Sukri, Shaili Falina Mohd
Shintani, Yukihiro
Kawarada, Hiroshi
[J]. APPLIED PHYSICS LETTERS, 2017, 111 (01)

← 1 2 3 4 5 →