Reducing Threshold Voltage of Organic Field-Effect Transistor by using ZrO2/PMMA as Gate Dielectric

被引：0

作者：

Shang, Liwei ^{[1
]}

Liu, Ming ^{[1
]}

Tu, Deyu ^{[1
]}

Zhen, Lijuan ^{[1
]}

Liu, Xinghua ^{[1
]}

Liu, Ge ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

来源：

2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年

关键词：

Thin film; OFET; ZrO2; PMMA;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By depositing a PMMA (poly(methyl methacrylate)) layer on top of an evaporated layer of ZrO2, the leakage has 4 orders of magnitude reducing compared with bare ZrO2 layer. Low roughness of PMMA/ZrO2 surface produces a high quality interface between the organic semiconductor and the combined insulator, thus the device has a significant improvement in performance. The typical field effect mobility, on/off current ratio, and sub-threshold slope of OFETs with bilayer dielectric are 5.6 x 10(-2) cm(2)/Vs, 1.2x10(3), and 0.3 V/decade respectively. It is noticeable that the threshold voltage is only 0.1V.

引用

页码：1033 / 1036

页数：4

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