Low-Voltage Organic Field-Effect Transistor With PMMA/ZrO2 Bilayer Dielectric

被引：20

作者：

Shang, Liwei ^{[1
]}

Liu, Ming ^{[1
]}

Tu, Deyu ^{[1
]}

Liu, Ge ^{[1
]}

Liu, Xinohua ^{[1
]}

Ji, Zhuoyu ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Nanofabricat & Novel Devices Integrat Tec, Beijing 100029, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 03期

基金：

中国国家自然科学基金;

关键词：

Dielectric films; leakage currents; thin-film devices; threshold logic devices; voltage control; THIN-FILM TRANSISTORS; HIGH-MOBILITY;

D O I：

10.1109/TED.2008.2011576

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the application of a bilayer polymethylmethacrylate (PMMA)/ZrO2 dielectric in copper phthalocyanine (CuPc) organic field-effect transistors (OFETs). By depositing a PMMA layer on ZrO2, the leakage of the dielectric is reduced by one order of magnitude compared to single-layer ZrO2. A high-quality interface is obtained between the organic semiconductor and the combined insulators. By integrating the advantages of polymer and high-k dielectrics, the device achieves both high mobility and low threshold voltage. The typical field-effect mobility, threshold voltage, on/off current ratio, and subthreshold slope of OFETs with bilayer dielectric are 5.6 x 10(-2) cm(2)/V. S, 0.8 V, 1.2 x 10(3), and 2.1 V/dec, respectively. By using the bilayer dielectrics, the hysteresis observed in the devices with single-layer ZrO2 is no longer present.

引用

页码：370 / 376

页数：7

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