Fabrication of an organic field-effect transistor on a mica gate dielectric

被引：10
|
作者：
Matsumoto, Akira
Onoki, Ryo
Ueno, Keiji
Ikeda, Susumu
Saiki, Koichiro
机构：
[1] Saitama Univ, Dept Chem, Sakura Ku, Saitama 3388570, Japan
[2] Univ Tokyo, Dept Complex Sci & Engn, Kashiwa, Chiba 2778561, Japan
来源：
CHEMISTRY LETTERS | 2006年 / 35卷 / 04期
关键词：
D O I：
10.1246/cl.2006.354
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We fabricated pentacene-based organic field-effect transistors (OFETs) using single-crystalline natural mica substrates as the gate dielectric. Substrate temperatures during the deposition of pentacene films were varied from room temperature (RT) to 90 degrees C. Epitaxial growth of the pentacene film on the mica surface was observed even at RT. The FET working characteristics on the mica gate dielectric have been observed for the first time.
引用
收藏
页码：354 / 355
页数：2
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