ESD (Electrostatic Discharge) protection design for nanoelectronics in CMOS technology

被引:0
|
作者
Ker, Ming-Dou [1 ]
机构
[1] Natl Chiao Tung Univ, Nanoelect & Gigascale Syst Lab, Inst Elect, Taipei, Taiwan
关键词
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this tutorial, we teach useful on-chip ESD protection designs for CMOS integrated circuits. The contents include (1) Introduction to Electrostatic Discharge, (2) Design Techniques of ESD Protection Circuit, (3) Whole-Chip ESD Protection Design, and (4) ESD Protection for Mixed-Voltage I/O Interface. The clear ESD protection design concepts and detailed circuit implementations are presented in this course. ESD protection design is more important in the nanoscale CMOS technology. High ESD robustness can not be achieved with only process solutions. The circuit design solutions should be added into the chips with suitable layout arrangement to achieve the purpose of whole-chip ESD protection for IC products.
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页码:217 / 279
页数:63
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