Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency

被引：5
|
作者：
Trémouilles, D
Bafleur, M
Bertrand, G
Nolhier, N
Mauran, N
Lescouzères, L
机构：
[1] CNRS, LAAS, F-31077 Toulouse 4, France
[2] ON Semicond, F-31035 Toulouse 1, France
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2004年 / 39卷 / 10期
关键词：
D O I：
10.1109/JSSC.2004.833764
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we show how latch-up guard rings, surrounding electrostatic discharges (ESD) protection devices, can reduce the overall performance of the ESD protection scheme. This issue is addressed by TCAD simulation and experimental results. Design guidelines to cope with this problem are proposed.
引用
收藏
页码：1778 / 1782
页数：5
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