Effects of source materials and container on growth process of SiC crystal

被引：6
|
作者：
Liu, Junlin [1 ]
Gao, Jiqiang [1 ]
Cheng, Jikuan [1 ]
Jiang, Xian [1 ]
Yang, Jianfeng [1 ]
Qiao, Guanjun [1 ]
机构：
[1] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R China
来源：
CRYSTAL GROWTH & DESIGN | 2006年 / 6卷 / 09期
关键词：
D O I：
10.1021/cg060163k
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Nucleation of SiC polycrystals was investigated using TaC and graphite lids. TaC and graphite containers were also used to compare the growth rates of SiC crystal in four systems ( TaC + SiC, C + SiC, TaC + Si + SiC, and C + Si + SiC systems). The experimental results indicated that graphite lids provide growth conditions for SiC polycrystals that restrict the radial direction growth of seed. The TaC lid can restrain nucleation of SiC polycrystals, which creates better growth conditions for seed along the radial direction. The growth rates of SiC crystal for the TaC + Si + SiC and C + Si + SiC systems are higher than those of the TaC + SiC and C + SiC systems.
引用
收藏
页码：2166 / 2168
页数：3
相关论文
共 50 条
  • [31] SiC-seeded crystal growth
    Glass, RC
    Henshall, D
    Tsvetkov, VF
    Carter, CH
    [J]. MRS BULLETIN, 1997, 22 (03) : 30 - 35
  • [32] Review of SiC crystal growth technology
    Wellmann, Peter J.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (10)
  • [33] SiC-Seeded Crystal Growth
    R. C. Glass
    D. Henshall
    V. F. Tsvetkov
    C. H. Carter
    [J]. MRS Bulletin, 1997, 22 : 30 - 35
  • [34] Synthesis of Source Powder for Sic Crystal Growth Using High Purity Silicon and Carbon Powder
    Wang, H.
    Yan, C. F.
    Kong, H. K.
    Chen, J. J.
    Xin, J.
    Shi, E. W.
    [J]. OPTICAL, ELECTRONIC MATERIALS AND APPLICATIONS II, 2012, 529 : 64 - 68
  • [35] Processing and properties of SiC and SiC/SiC composite materials by melt infiltration process
    Lee, SP
    Yoon, HK
    Park, JS
    Katoh, Y
    Kohyama, A
    [J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2003, 17 (8-9): : 1833 - 1838
  • [36] Effects of raw materials on the growth of silicon carbide single crystal
    Chen, ZZ
    Shi, EW
    Xiao, B
    Zhuang, JY
    [J]. JOURNAL OF INORGANIC MATERIALS, 2003, 18 (04) : 737 - 743
  • [37] Effects of crystal rotation on the carbon transport in the top-seeded solution growth of SiC single crystal
    Li, Fuchang
    He, Lei
    Yan, Zhaoyang
    Qi, Xiaofang
    Ma, Wencheng
    Chen, Jianli
    Xu, Yongkuan
    Hu, Zhanggui
    [J]. JOURNAL OF CRYSTAL GROWTH, 2023, 607
  • [38] GROWTH OF SIC WHISKERS BY VLS PROCESS
    URRETAVIZCAYA, G
    LOPEZ, JMP
    [J]. JOURNAL OF MATERIALS RESEARCH, 1994, 9 (11) : 2981 - 2986
  • [39] Lateral boron distribution in polycrystalline SiC source materials
    Linnarsson, M. K.
    Kaiser, M.
    Liljedahl, R.
    Jokubavicius, V.
    Ou, Y.
    Wellmann, P.
    Ou, H.
    Syvajarvi, M.
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 397 - +
  • [40] EFFECTS OF LIMING SOURCE AND RATE ON CONTAINER MEDIA PH
    INGRAM, DL
    JOHNSON, CR
    [J]. PROCEEDINGS OF THE FLORIDA STATE HORTICULTURAL SOCIETY, 1982, 95 : 156 - 157
12345