Effects of source materials and container on growth process of SiC crystal

被引：6
|
作者：
Liu, Junlin [1 ]
Gao, Jiqiang [1 ]
Cheng, Jikuan [1 ]
Jiang, Xian [1 ]
Yang, Jianfeng [1 ]
Qiao, Guanjun [1 ]
机构：
[1] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R China
来源：
CRYSTAL GROWTH & DESIGN | 2006年 / 6卷 / 09期
关键词：
D O I：
10.1021/cg060163k
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Nucleation of SiC polycrystals was investigated using TaC and graphite lids. TaC and graphite containers were also used to compare the growth rates of SiC crystal in four systems ( TaC + SiC, C + SiC, TaC + Si + SiC, and C + Si + SiC systems). The experimental results indicated that graphite lids provide growth conditions for SiC polycrystals that restrict the radial direction growth of seed. The TaC lid can restrain nucleation of SiC polycrystals, which creates better growth conditions for seed along the radial direction. The growth rates of SiC crystal for the TaC + Si + SiC and C + Si + SiC systems are higher than those of the TaC + SiC and C + SiC systems.
引用
收藏
页码：2166 / 2168
页数：3
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