Effects of raw materials on the growth of silicon carbide single crystal

被引：0

作者：

Chen, ZZ ^{[1
]}

Shi, EW ^{[1
]}

Xiao, B ^{[1
]}

Zhuang, JY ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

来源：

JOURNAL OF INORGANIC MATERIALS | 2003年 / 18卷 / 04期

关键词：

SiC raw materials; SiC single crystals; phase transition; Si/C ratio; pinhole;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SiC single crystal was grown by physical vapor transportation (PVT) technique using beta-SiC raw materials. The phase transformation of raw materials during the crystal growth was investigated by XRD. It was found that the phase transition from beta-SiC to alpha-SiC was completed after growth of 30min. The molar ratio of Si/C in the grown crystal was more than 1 and dependent on the growth time. The maximum value of Si/C was obtained at the intermediate growth process. The formation of pinhole in the grown crystal was related to the deviation from stoichiometry of Si/C=1 in the vapor phase and the impurity of raw materials. It was confirmed by EDX analysis.

引用

页码：737 / 743

页数：7

共 11 条

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