Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

被引：4

作者：

Xiao Yao ^{[1
]}

Guo Hong-Xia ^{[1
,2
]}

Zhang Feng-Qi ^{[1
]}

Zhao Wen ^{[1
]}

Wang Yan-Ping ^{[1
]}

Zhang Ke-Ying ^{[1
]}

Ding Li-Li ^{[1
]}

Fan Xue ^{[3
]}

Luo Yin-Hong ^{[1
]}

Wang Yuan-Ming ^{[1
]}

机构：

[1] Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Radiat Simulat & Eff, Xian 710024, Peoples R China

[2] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China

[3] State Key Lab Elect Thin Films & Integrated Devic, Chengdu 61005, Peoples R China

来源：

CHINESE PHYSICS B | 2014年 / 23卷 / 11期

关键词：

single event upset; total dose; static random access memory; imprint effect; CMOS SRAMS; SIMULATION; HARDNESS;

D O I：

10.1088/1674-1056/23/11/118503

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Synergistic effects of the total ionizing dose (TID) on the single event upset (SEU) sensitivity in static random access memories (SRAMs) were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.

引用

页数：4

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