Total ionizing dose and synergistic effects of magnetoresistive random-access memory

被引：3
|
作者：
Zhang, Xing-Yao [1 ,2 ]
Guo, Qi [1 ,2 ]
Li, Yu-Dong [1 ,2 ]
Wen, Lin [1 ,2 ]
机构：
[1] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
[2] Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China
来源：
NUCLEAR SCIENCE AND TECHNIQUES | 2018年 / 29卷 / 08期
基金：
中国科学院西部之光基金; 中国国家自然科学基金;
关键词：
Magnetoresistive random-access memory Total ionizing dose; Synergistic effect;
D O I：
10.1007/s41365-018-0451-8
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
A magnetoresistive random-access memory (MRAM) device was irradiated by Co-60 gamma-rays and an electron beam. The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation, from which the total ionizing dose (TID) and the synergistic damage mechanism of MRAM were analyzed. In addition, DC, AC, and functional parameters of the memory were tested under irradiation and annealing via a very large-scale integrated circuit test system. The radiation-sensitive parameters were obtained through analyzing the data. Because of the magnetic field applied on the MRAM while testing the synergistic effects, shallow trench isolation leakage and Frenkel-Poole emission due to synergistic effects were smaller than that of TID, and hence radiation damage of the synergistic effects was also lower.
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页数：5
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