Total ionizing dose and synergistic effects of magnetoresistive random-access memory

被引：0
|
作者：
Xing-Yao Zhang
Qi Guo
Yu-Dong Li
Lin Wen
机构：
[1] Chinese Academy of Sciences,Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry
[2] Xinjiang Key Laboratory of Electronic Information Material and Device,undefined
来源：
Nuclear Science and Techniques | 2018年 / 29卷
关键词：
Magnetoresistive random-access memory; Total ionizing dose; Synergistic effect;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A magnetoresistive random-access memory (MRAM) device was irradiated by 60Co γ-rays and an electron beam. The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation, from which the total ionizing dose (TID) and the synergistic damage mechanism of MRAM were analyzed. In addition, DC, AC, and functional parameters of the memory were tested under irradiation and annealing via a very large-scale integrated circuit test system. The radiation-sensitive parameters were obtained through analyzing the data. Because of the magnetic field applied on the MRAM while testing the synergistic effects, shallow trench isolation leakage and Frenkel–Poole emission due to synergistic effects were smaller than that of TID, and hence radiation damage of the synergistic effects was also lower.
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