Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

被引：4
|
作者：
Xiao Yao [1 ]
Guo Hong-Xia [1 ,2 ]
Zhang Feng-Qi [1 ]
Zhao Wen [1 ]
Wang Yan-Ping [1 ]
Zhang Ke-Ying [1 ]
Ding Li-Li [1 ]
Fan Xue [3 ]
Luo Yin-Hong [1 ]
Wang Yuan-Ming [1 ]
机构：
[1] Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Radiat Simulat & Eff, Xian 710024, Peoples R China
[2] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
[3] State Key Lab Elect Thin Films & Integrated Devic, Chengdu 61005, Peoples R China
来源：
CHINESE PHYSICS B | 2014年 / 23卷 / 11期
关键词：
single event upset; total dose; static random access memory; imprint effect; CMOS SRAMS; SIMULATION; HARDNESS;
D O I：
10.1088/1674-1056/23/11/118503
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Synergistic effects of the total ionizing dose (TID) on the single event upset (SEU) sensitivity in static random access memories (SRAMs) were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.
引用
收藏
页数：4
相关论文
共 50 条
  • [21] Research on total dose irradiation and annealing effect of static random access memory
    Yu, X.-F. (yuxf@ms.xjb.ac.cn), 1600, Atomic Energy Press (46):
  • [22] Effects of total ionizing dose on single event effect sensitivity of FRAMs
    Ji, Qinggang
    Liu, Jie
    Li, Dongqing
    Liu, Tianqi
    Ye, Bing
    Zhao, Peixiong
    Sun, Youmei
    MICROELECTRONICS RELIABILITY, 2019, 95 : 1 - 7
  • [23] Pattern dependence in synergistic effects of total dose on single-event upset hardness
    Guo, Hongxia
    Ding, Lili
    Xiao, Yao
    Zhang, Fengqi
    Luo, Yinhong
    Zhao, Wen
    Wang, Yuanming
    CHINESE PHYSICS B, 2016, 25 (09)
  • [24] Pattern dependence in synergistic effects of total dose on single-event upset hardness
    郭红霞
    丁李利
    肖尧
    张凤祁
    罗尹虹
    赵雯
    王园明
    Chinese Physics B, 2016, 25 (09) : 467 - 471
  • [25] Total ionizing dose and single event effects of 1 Mb HfO2-based resistive-random-access memory
    Bi, Jinshun
    Duan, Yuan
    Xi, Kai
    Li, Bo
    MICROELECTRONICS RELIABILITY, 2018, 88-90 : 891 - 897
  • [26] Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons
    金晓明
    陈伟
    李俊霖
    齐超
    郭晓强
    李瑞宾
    刘岩
    Chinese Physics B, 2019, (10) : 391 - 400
  • [27] Single-event upset prediction in static random access memory cell account for parameter variations
    Mingxue Huo
    Guoliang Ma
    Bin Zhou
    Liyi Xiao
    Chunhua Qi
    Yanqing Zhang
    Jianning Ma
    Yinghun Piao
    Tianqi Wang
    Science China Information Sciences, 2019, 62
  • [28] Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons
    Jin, Xiao-Ming
    Chen, Wei
    Li, Jun-Lin
    Qi, Chao
    Guo, Xiao-Qiang
    Li, Rui-Bin
    Liu, Yan
    CHINESE PHYSICS B, 2019, 28 (10)
  • [29] Single-event upset prediction in static random access memory cell account for parameter variations
    Huo, Mingxue
    Ma, Guoliang
    Zhou, Bin
    Xiao, Liyi
    Qi, Chunhua
    Zhang, Yanqing
    Ma, Jianning
    Piao, Yinghun
    Wang, Tianqi
    SCIENCE CHINA-INFORMATION SCIENCES, 2019, 62 (06)
  • [30] Single-event upset prediction in static random access memory cell account for parameter variations
    Mingxue HUO
    Guoliang MA
    Bin ZHOU
    Liyi XIAO
    Chunhua QI
    Yanqing ZHANG
    Jianning MA
    Yinghun PIAO
    Tianqi WANG
    ScienceChina(InformationSciences), 2019, 62 (06) : 177 - 179
12345