Biocompatibility of Hydrogen-Diluted Amorphous Silicon Carbide Thin Films for Artificial Heart Valve Coating

被引:9
|
作者
Rizal, Umesh [1 ]
Swain, Bhabani S. [2 ]
Rameshbabu, N. [3 ]
Swain, Bibhu P. [1 ]
机构
[1] Sikkim Manipal Inst Technol, Ctr Mat Sci & Nanotechnol, Nano Proc Lab, Majitar, East Sikkim, India
[2] Kookmin Univ, Sch Adv Mat Engn, Seoul, South Korea
[3] Natl Inst Technol, Dept Met & Mat Engn, Tiruchirappalli, Tamil Nadu, India
关键词
apoptosis; a-SiC:H; cytotoxicity test; viability; TEMPERATURE; ADSORPTION;
D O I
10.1007/s11665-018-3198-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Amorphous silicon carbide (a-SiC:H) thin films were synthesized using trichloromethylsilane by a hot wire chemical vapor deposition process. The deposited films were characterized by Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, x-ray diffraction and x-ray photoelectron spectroscopy to confirm its chemical bonding, structural network and composition of the a-SiC:H films. The optical microscopy images reveal that hydrogen dilution increased the surface roughness and pore density of a-SiC:H thin film. The Raman spectroscopy and FTIR spectra reveal chemical network consisting of Si-Si, C-C and Si-C bonds, respectively. The XRD spectroscopy and Raman spectroscopy indicate a-SiC:H still has short-range order. In addition, in vitro cytotoxicity test ensures the behavior of cell-semiconductor hybrid to monitor the proper coordination. The live-dead assays and MTT assay reveal an increase in green nucleus cell, and cell viability is greater than 88%, respectively, showing non-toxic nature of prepared a-SiC:H film. Moreover, the result indicated by direct contact assay, and cell prefers to adhere and proliferate on a-SiC:H thin films having a positive effect as artificial heart valve coating material.
引用
收藏
页码:2679 / 2686
页数:8
相关论文
共 50 条
  • [21] Controlled Growth of Nanocrystalline Silicon within Amorphous Silicon Carbide Thin Films
    Kole, Arindam
    Chaudhuri, Partha
    SOLID STATE PHYSICS: PROCEEDINGS OF THE 58TH DAE SOLID STATE PHYSICS SYMPOSIUM 2013, PTS A & B, 2014, 1591 : 437 - 439
  • [22] Effect of hydrogen on stability of amorphous silicon thin films
    Pietruszko, SM
    Jang, J
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 71 (04) : 459 - 464
  • [23] Hydrogen evolution in hydrogenated microcrystalline silicon carbide thin films
    Nemmour, Soumia
    Dioumi, Siham
    Kail, Fatiha
    Roura-Grabulosa, Pere
    Roca i Cabarrocas, Pere
    Chaned, Larbi
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2019, 37 (03):
  • [24] Comparative analysis of thin films of hydrogenated and unhydrogenated amorphous silicon carbide
    Vasin, A.V.
    Rusavskij, A.V.
    Starik, S.P.
    Kushnirenko, V.I.
    Kutsaj, A.M.
    Nazarov, A.N.
    Lysenko, V.S.
    Semenov, A.V.
    Puzikov, V.M.
    Gontar', A.G.
    Dub, S.N.
    Sverkhtverdye Materialy, 2004, (03): : 36 - 46
  • [25] Characterization of nitrogen-doped amorphous silicon carbide thin films
    Slovak Acad of Sciences, Bratislava, Slovakia
    Vacuum, 2 (165-167):
  • [26] High temperature annealing of hydrogenated amorphous silicon carbide thin films
    Wang, YH
    Lin, JY
    Huan, CHA
    Feng, ZC
    Chua, SJ
    THIN SOLID FILMS, 2001, 384 (02) : 173 - 176
  • [27] Spectroscopy and structural properties of amorphous and nanocrystalline silicon carbide thin films
    Halindintwali, Sylvain
    Knoesen, D.
    Julies, B. A.
    Arendse, C. J.
    Muller, T.
    Gengler, Regis Y. N.
    Rudolf, P.
    van Loosdrecht, P. H. M.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 9, 2011, 8 (09): : 2661 - 2664
  • [28] Structural relaxation of amorphous silicon carbide thin films in thermal annealing
    Xue, Kun
    Niu, Li-Sha
    Shi, Hui-Ji
    Liu, Jiwen
    THIN SOLID FILMS, 2008, 516 (12) : 3855 - 3861
  • [29] Effect of deposition temperature on the properties of amorphous silicon carbide thin films
    Huran, J.
    Hotovy, I.
    Pezoltd, J.
    Balalykin, N. I.
    Kobzev, A. P.
    THIN SOLID FILMS, 2006, 515 (02) : 651 - 653
  • [30] Characterization of nitrogen-doped amorphous silicon carbide thin films
    Safrankova, J
    Huran, J
    Hotovy, I
    Kobzev, AP
    Korenev, SA
    VACUUM, 1998, 51 (02) : 165 - 167