Structural relaxation of amorphous silicon carbide thin films in thermal annealing

被引：13
|
作者：
Xue, Kun [1 ]
Niu, Li-Sha [1 ]
Shi, Hui-Ji [1 ]
Liu, Jiwen [2 ]
机构：
[1] Tsinghua Univ, Dept Engn Mech, Sch Aerosp, FML, Beijing 100084, Peoples R China
[2] Tianjin Key Lab Photoelect Mat & Dev, Tianjin 300191, Peoples R China
来源：
THIN SOLID FILMS | 2008年 / 516卷 / 12期
基金：
中国国家自然科学基金;
关键词：
SiC thin films; structural relaxation; thermal annealing; recrystallization;
D O I：
10.1016/j.tsf.2007.06.194
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Amorphous Si0.4C0.6 thin films were deposited by radio frequency magnetron sputtering onto non-heated single crystal Si substrates, followed by annealing at 800 degrees C or 1100 degrees C in the vacuum chamber. The chemical bond properties and atomic local ordering as a function of the annealing temperature were characterized by Auger electron spectroscopy, scanning electron microscopy, X-ray photoelectron spectroscopy, Infrared absorption spectroscopy, X-ray diffraction, and Raman spectroscopy measurements. We have examined the evolution of microstructure in annealing-induced relaxation process, and investigated the initial stages of thermal crystallization of amorphous Si0.4C0.6. Meanwhile, the structure of excess C in the films also has been studied. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：3855 / 3861
页数：7
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