Architectural design tradeoffs in SRAM-based TCAMs

被引:0
|
作者
Ahmed, Ali [1 ]
Park, Kyungbae [2 ]
Khan, Saqib Ali [3 ]
Maroof, Naeem [3 ,4 ]
Baeg, Sanghyeon [5 ]
机构
[1] Usman Inst Technol, Karachi, Pakistan
[2] Samsung Elect, Seoul, South Korea
[3] KFUEIT, Comp Engn Dept, Ryk, Pakistan
[4] Univ Jeddah, Dept Elect & Elect Engn, Jeddah, Saudi Arabia
[5] Hanyang Univ, Seoul, South Korea
来源
IEICE ELECTRONICS EXPRESS | 2019年 / 16卷 / 13期
关键词
TCAM; SRAM; FPGA; emulation; memory architecture; HARDWARE; SEARCH;
D O I
10.1587/elex.16.20190267
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An SRAM-based TCAM (SbT) memory architecture is proposed which exploits the tradeoffs among critical design parameters - such as throughput (T), latency (L), SRAM utilization (U), and power dissipation (P). An 18 kb TCAM is implemented on FPGA that can be adapted as latency & throughput efficient (LTE), Mid-efficient (ME), or a power & memory efficient (PME). Our implementation results show that LTE utilizes 79.3% and 96.5% more SRAM bit resources, consumes 45% and 55% more dynamic power than the ME and the PME, respectively. However, the LTE architecture shows an efficient single clock cycle latency and higher throughput than ME and PME, respectively.
引用
收藏
页数:3
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