Wide Gap Microcrystalline Silicon Oxide Emitter for a-SiOx:H/c-Si Heterojunction Solar Cells

被引：34
|
作者：
Ding, Kaining [1 ]
Aeberhard, Urs [1 ]
Smirnov, Vladimir [1 ]
Hollaender, Bernd [2 ]
Finger, Friedhelm [1 ]
Rau, Uwe [1 ]
机构：
[1] Forschungszentrum Julich, Photovolta IEK5, D-52425 Julich, Germany
[2] Forschungszentrum Julich, PGI 9, D-52425 Julich, Germany
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 12期
关键词：
P-TYPE; FILM; SPECTROSCOPY; BUFFER; LAYER; IRON;
D O I：
10.7567/JJAP.52.122304
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper reports on the development of phosphorous doped microcrystalline silicon oxide (mu c-SiOx:H) films as an emitter window layer in flat p-type silicon heterojunction (SHJ) solar cells featuring intrinsic a-SiOx:H buffer layers. We investigated the material properties of n-type mu c-SiOx:H films grown at various input gas ratios and correlated the results of SHJ solar cells utilizing varying oxygen content and thickness of the emitter layer to the corresponding film properties. A maximum efficiency of 19.0% was achieved. The excellent short circuit current of 35.8 mA/cm(2) for flat cells was attributed to the low optical losses in the emitter window. (C) 2013 The Japan Society of Applied Physics
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页数：5
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