Wide Gap Microcrystalline Silicon Oxide Emitter for a-SiOx:H/c-Si Heterojunction Solar Cells

被引：34

作者：

Ding, Kaining ^{[1
]}

Aeberhard, Urs ^{[1
]}

Smirnov, Vladimir ^{[1
]}

Hollaender, Bernd ^{[2
]}

Finger, Friedhelm ^{[1
]}

Rau, Uwe ^{[1
]}

机构：

[1] Forschungszentrum Julich, Photovolta IEK5, D-52425 Julich, Germany

[2] Forschungszentrum Julich, PGI 9, D-52425 Julich, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 12期

关键词：

P-TYPE; FILM; SPECTROSCOPY; BUFFER; LAYER; IRON;

D O I：

10.7567/JJAP.52.122304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper reports on the development of phosphorous doped microcrystalline silicon oxide (mu c-SiOx:H) films as an emitter window layer in flat p-type silicon heterojunction (SHJ) solar cells featuring intrinsic a-SiOx:H buffer layers. We investigated the material properties of n-type mu c-SiOx:H films grown at various input gas ratios and correlated the results of SHJ solar cells utilizing varying oxygen content and thickness of the emitter layer to the corresponding film properties. A maximum efficiency of 19.0% was achieved. The excellent short circuit current of 35.8 mA/cm(2) for flat cells was attributed to the low optical losses in the emitter window. (C) 2013 The Japan Society of Applied Physics

引用

页数：5

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