Improvement of n-type nc-3C-SiC:H heterojunction emitter for c-Si solar cells

We optimized an n-type hydrogenated nanocrystalline cubic silicon carbide (nc-3C-SiC:H) emitter by changing the plasma power density and monomethylsilane (MMS) flow rate during buffer layer deposition. Quasi-steady state photoconductance (QSSPC) method was carried out to measure the effective lifetime and implied open circuit voltage (implied-V-oc). The implied-V-oc above 0.7 V was achieved with the plasma power density of 1.6 W/cm(2) and MMS flow rate of 2.75 sccm. These result indicates that the properties of n-type nc-3C-SiC:H emitter strongly depend on the deposition condition of a-SiC:H buffer layer.