Characterisation of interface-engineered ramp-edge Josephson junctions by transmission electron microscopy

被引:1
|
作者
Gustafsson, M [1 ]
Olsson, E
Moeckly, B
机构
[1] Chalmers Univ Technol, S-41296 Gothenburg, Sweden
[2] Uppsala Univ, Angstrom Lab, S-75121 Uppsala, Sweden
[3] Conductus Inc, Sunnyvale, CA 94086 USA
关键词
D O I
10.1023/A:1022543800427
中图分类号
O59 [应用物理学];
学科分类号
摘要
Interface-engineered ramp-edge junctions (IEJ) have been characterised by high-resolution transmission electron microscopy, X-ray analysis and electron energy loss spectroscopy. The IEJ are prepared by plasma etching an ion-milled YBa2Cu3O7-delta (YBCO) ramp-edge and subsequently a top YBCO layer is deposited. The results show that the YBCO at the plasma-etched interface has a modified structure. The modified barrier structure has a pseudo cubic unit cell which is rotated 45 degrees around the [001] axis with respect to the underlying YBCO.
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收藏
页码:581 / 585
页数:5
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