Characterisation of interface-engineered ramp-edge Josephson junctions by transmission electron microscopy

被引：1
|
作者：
Gustafsson, M [1 ]
Olsson, E
Moeckly, B
机构：
[1] Chalmers Univ Technol, S-41296 Gothenburg, Sweden
[2] Uppsala Univ, Angstrom Lab, S-75121 Uppsala, Sweden
[3] Conductus Inc, Sunnyvale, CA 94086 USA
来源：
JOURNAL OF LOW TEMPERATURE PHYSICS | 1999年 / 117卷 / 3-4期
关键词：
D O I：
10.1023/A:1022543800427
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Interface-engineered ramp-edge junctions (IEJ) have been characterised by high-resolution transmission electron microscopy, X-ray analysis and electron energy loss spectroscopy. The IEJ are prepared by plasma etching an ion-milled YBa2Cu3O7-delta (YBCO) ramp-edge and subsequently a top YBCO layer is deposited. The results show that the YBCO at the plasma-etched interface has a modified structure. The modified barrier structure has a pseudo cubic unit cell which is rotated 45 degrees around the [001] axis with respect to the underlying YBCO.
引用
收藏
页码：581 / 585
页数：5
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