Nonlinear electrical properties of three-terminal junctions

被引：50
|
作者：
Wallin, D.
Shorubalko, I.
Xu, H. Q.
Cappy, A.
机构：
[1] Lund Univ, Div Solid State Phys, S-22100 Lund, Sweden
[2] CNRS, UMR, Inst Elect Microelect & Nanotechnol, Dept Hyperfrequences & Semicond, F-59652 Villeneuve Dascq, France
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 09期
关键词：
D O I：
10.1063/1.2344849
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors report on room-temperature electrical measurements of three-terminal junctions made from a semiconductor heterostructure. The correlation between the junction size of the devices and the voltages needed to be applied in order to observe the electrical characteristics of three-terminal ballistic junctions is studied. The authors show that the ballistic behavior of electron transport can be observed in a three-terminal junction with a junction size of a few micrometers, much larger than the mean free path of electrons in the material. The results are explained in terms of a bias-induced enhancement of the electron mean free path in the system. (c) 2006 American Institute of Physics.
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页数：3
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