Nonlinear electrical properties of three-terminal junctions

The authors report on room-temperature electrical measurements of three-terminal junctions made from a semiconductor heterostructure. The correlation between the junction size of the devices and the voltages needed to be applied in order to observe the electrical characteristics of three-terminal ballistic junctions is studied. The authors show that the ballistic behavior of electron transport can be observed in a three-terminal junction with a junction size of a few micrometers, much larger than the mean free path of electrons in the material. The results are explained in terms of a bias-induced enhancement of the electron mean free path in the system. (c) 2006 American Institute of Physics.