Electrical gating and rectification in graphene three-terminal junctions

被引：12

作者：

Haendel, B. ^{[1
,2
,3
,4
]}

Haehnlein, B. ^{[1
,2
]}

Goeckeritz, R. ^{[5
]}

Schwierz, F. ^{[3
,4
]}

Pezoldt, J. ^{[1
,2
]}

机构：

[1] FG Nanotechnol, Inst Mikro & Nanotechnol MacroNano, D-98684 Ilmenau, Germany

[2] FG Nanotechnol, Inst Mikro & Nanoelekt, D-98684 Ilmenau, Germany

[3] Tech Univ Ilmenau, Inst Mikro & Nanotechnol MacroNano, FG Festkorperelekt, D-98684 Ilmenau, Germany

[4] Tech Univ Ilmenau, Inst Mikro & Nanoelekt, D-98684 Ilmenau, Germany

[5] Univ Halle Wittenberg, Inst Phys, FG Nanostrukturierte Mat, D-06120 Halle, Saale, Germany

来源：

APPLIED SURFACE SCIENCE | 2014年 / 291卷

关键词：

Three terminal junction; Rectification; Transistor; Switch; Graphene; Silicon carbide; TRANSPORT; TRANSISTORS; DIODE;

D O I：

10.1016/j.apsusc.2013.09.066

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Graphene was grown on semiinsulating silicon carbide at 1800 degrees C and atmospheric argon pressure. The all carbon T- and Y-shape three terminal junction devices were fabricated using electron beam lithography. All devices featured the negative rectification effect. The exact properties of the devices like the curvature of the output voltage response can be tuned by changing the branch width in the T- and Y-shape devices. Beside the rectification a switching behavior is demonstrated with the same three terminal junctions. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：87 / 92

页数：6

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