Nonlinear electron transport in InAs/AlGaSb three-terminal ballistic junctions

被引：1

作者：

Koyama, M. ^{[1
]}

Inoue, T. ^{[1
]}

Amano, N. ^{[1
]}

Maemoto, T. ^{[1
]}

Sasa, S. ^{[1
]}

Inoue, M. ^{[1
]}

机构：

[1] Osaka Inst Technol, Nanomat Microdevices Res Ctr, Asahi Ku, Osaka 535, Japan

来源：

INTERNATIONAL SYMPOSIUM ON ADVANCED NANODEVICES AND NANOTECHNOLOGY | 2008年 / 109卷

关键词：

D O I：

10.1088/1742-6596/109/1/012023

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have fabricated and characterized an InAs/AlGaSb three-terminal ballistic junction device. The fabricated device exhibited nonlinear electron transport properties because of ballistic motion of electrons in this structure that is comparable to the electron mean free path. When the left branch is biased to a finite voltage V and the right to a voltage of -V (push-pull fashion), negative voltages appeared at the floating central branch regardless of the polarity of the input voltages. In the case of the central branch grounded in push-pull fashion, the clear current rectification effect also observed in the current flow of the central branch at 4.2K to even at 300K.

引用

页数：4

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