Nonlinear operation of GaInAs/InP-based three-terminal ballistic junctions

被引：125
|
作者：
Shorubalko, I [1 ]
Xu, HQ [1 ]
Maximov, I [1 ]
Omling, P [1 ]
Samuelson, L [1 ]
Seifert, W [1 ]
机构：
[1] Lund Univ, Solid State Phys & Nanometer Consortium, S-22100 Lund, Sweden
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 09期
关键词：
D O I：
10.1063/1.1396626
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on nonlinear electrical properties of three-terminal ballistic junctions (TBJs) based on high-electron-mobility GaInAs/InP quantum-well structures. Nonlinear electrical transport behavior of the TBJs is found, and we show a correlation between this behavior and the linear regime of electron transmission in the devices. We also study device geometry effects on these electrical properties of the TBJs. Finally, we demonstrate room-temperature operation of the devices. The results obtained are compared with recent predictions by Xu [H. Q. Xu, Appl. Phys. Lett. 78, 2064 (2001)] and good agreement is found. (C) 2001 American Institute of Physics.
引用
收藏
页码：1384 / 1386
页数：3
相关论文
共 50 条
  • [1] Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs
    Maximov, I
    Carlberg, P
    Wallin, D
    Shorubalko, I
    Seifert, W
    Xu, HQ
    Montelius, L
    Samuelson, L
    [J]. NANOTECHNOLOGY, 2002, 13 (05) : 666 - 668
  • [2] Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP
    Maximov, I
    Carlberg, P
    Shorubalko, I
    Wallin, D
    Sarwe, EL
    Beck, M
    Graczyk, M
    Seifert, W
    Xu, HQ
    Montelius, L
    Samuelson, L
    [J]. MICROELECTRONIC ENGINEERING, 2003, 67-8 : 196 - 202
  • [3] Nonlinear electron transport in InAs/AlGaSb three-terminal ballistic junctions
    Koyama, M.
    Inoue, T.
    Amano, N.
    Maemoto, T.
    Sasa, S.
    Inoue, M.
    [J]. INTERNATIONAL SYMPOSIUM ON ADVANCED NANODEVICES AND NANOTECHNOLOGY, 2008, 109
  • [4] Logic AND/NAND gates based on three-terminal ballistic junctions
    Reitzenstein, S
    Worschech, L
    Hartmann, P
    Forchel, A
    [J]. ELECTRONICS LETTERS, 2002, 38 (17) : 951 - 953
  • [5] Electrical properties of three-terminal ballistic junctions
    Xu, HQ
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (14) : 2064 - 2066
  • [6] Ballistic thermal rectification in nanoscale three-terminal junctions
    Zhang, Lifa
    Wang, Jian-Sheng
    Li, Baowen
    [J]. PHYSICAL REVIEW B, 2010, 81 (10):
  • [7] Diode and transistor behaviors of three-terminal ballistic junctions
    Xu, HQ
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (05) : 853 - 855
  • [8] A novel SR latch device realized by integration of three-terminal ballistic junctions in InGaAs/InP
    Sun, Jie
    Wallin, Daniel
    Maximov, Ivan
    Xu, H. Q.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2008, 29 (06) : 540 - 542
  • [9] Novel nanoelectronic device applications based on the nonlinearity of three-terminal ballistic junctions
    Sun, Jie
    Wallin, D.
    Brusheim, P.
    Maximov, I.
    Wang, Z. G.
    Xu, H. Q.
    [J]. PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 1471 - +
  • [10] Nonlinear electrical properties of three-terminal junctions
    Wallin, D.
    Shorubalko, I.
    Xu, H. Q.
    Cappy, A.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (09)
12345